Semiconductor memory device and magneto-logic circuit
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United States of America Patent
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Jul 13, 2010
Grant Date -
Sep 11, 2008
app pub date -
Oct 19, 2007
filing date -
Mar 7, 2007
priority date (Note) -
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Abstract
Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.
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