Integrated magnetoresistive sensor
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United States of America Patent
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Dec 17, 1996
Grant Date -
N/A
app pub date -
Apr 15, 1994
filing date -
Apr 21, 1993
priority date (Note) -
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status (Latency Note)
Importance
Abstract
An integrated magnetoresistive sensor includes a magnetoresistive element portion in which a plurality of resistors, each having a plurality of magnetoresistive elements, are aligned in an array. The magnetoresistive elements each have a single layer ferromagnetic thin film. The resistors are arranged so that two adjacent resistors have orthogonal maximum detection directions, respectively, and the plurality of resistors are connected to constitute a electrical circuit having a pair of opposing nodes. A comparison circuit portion compares outputs from the two opposing nodes and outputs a comparison result. The ferromagnetic thin film has NiFeCo as a major component. One of the plurality of resistors may have a different resistance when no magnetic field is applied relative to the remaining resistors.
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