Semiconductor component, particularly a micromechanical pressure sensor
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United States of America Patent
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Jun 6, 2006
Grant Date -
Aug 7, 2003
app pub date -
Nov 8, 2002
filing date -
Nov 8, 2001
priority date (Note) -
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Abstract
A semiconductor component, in particular a micromechanical pressure sensor based on silicon, having a base layer, an at least largely self-supporting diaphragm and an overlayer situated on the diaphragm, the diaphragm and the base layer, at least from place to place, delimiting a void. Furthermore, at least from place to place, above the diaphragm a conducting region is provided in the overlayer which is electrically poorly conductive as compared to the conducting region, to which the surface of the diaphragm that faces the overlayer is able to be electrically contacted.
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