Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
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United States of America Patent
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Aug 7, 2007
Grant Date -
Jun 16, 2005
app pub date -
Oct 7, 2004
filing date -
Oct 7, 2003
priority date (Note) -
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Abstract
An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.
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