Method to build self-aligned NPN in advanced BiCMOS technology
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United States of America Patent
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Sep 4, 2007
Grant Date -
Mar 23, 2006
app pub date -
Sep 21, 2004
filing date -
Sep 21, 2004
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Abstract
The present invention provides a method of forming a self-aligned heterobipolar transistor (HBT) device in a BiCMOS technology. The method includes forming a raised extrinsic base structure by using an epitaxial growth process in which the growth rate between single crystal silicon and polycrystalline silicon is different and by using a low temperature oxidation process such as a high-pressure oxidation (HIPOX) process to form a self-aligned emitter/extrinsic base HBT structure.
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