Method of forming a bi-directional transistor with by-pass path

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United States of America Patent

PATENT NO 8530284
APP PUB NO 20120083075A1
SERIAL NO

13324682

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Abstract

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In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.

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Patent Owner(s)

  • SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Robb, Francine Y Fountain Hills, US 37 990
Robb, Stephen P Fountain Hills, US 52 1131

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