Reducing resistivity in interconnect structures of integrated circuits
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United States of America Patent
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Apr 5, 2011
Grant Date -
Nov 8, 2007
app pub date -
May 8, 2006
filing date -
May 8, 2006
priority date (Note) -
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Abstract
An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, an oxide-based barrier layer directly on sidewalls of the opening, and conductive materials filling the remaining portion of the opening.
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