Power semiconductor device having trench gate structure and method for manufacturing the same
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United States of America Patent
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Feb 25, 2003
Issued Date -
N/A
app pub date -
Jun 28, 1999
filing date -
Jun 30, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A power semiconductor device having a trench gate structure in which it is possible to reduce the number of required masks and to improve its characteristics, and a method for manufacturing the same, includes a semiconductor substrate and a semiconductor region of a first conductive type formed on the semiconductor substrate. A source region of a second conductive type is formed on the semiconductor region. A trench is formed to pass through the source region and the semiconductor region of the first conductive layer. A first conductive layer formed to be insulated from the semiconductor substrate by interposing a gate insulating film, and a gate formed of a second conductive layer surrounded by the first conductive layer are formed in the trench. An interlayer dielectric film is formed on the semiconductor substrate. A gate electrode is formed connected to the gate through a contact hole formed in the interlayer dielectric film. A source electrode is formed connected to the source region through a second contact hole formed in the interlayer dielectric film.
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