Composition for removing photoresist residue and polymer residue
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United States of America Patent
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Jul 21, 2009
Grant Date -
Dec 29, 2005
app pub date -
Jun 28, 2005
filing date -
Jun 29, 2004
priority date (Note) -
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Abstract
A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.
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