Vertical bipolar transistor
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United States of America Patent
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May 17, 2005
Grant Date -
Aug 21, 2003
app pub date -
Feb 14, 2003
filing date -
Feb 14, 2002
priority date (Note) -
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Abstract
A vertical bipolar transistor has a J-FET incorporated in an epitaxial layer. The pinch-off voltage of the J-FET is less than the collector-emitter breakdown voltage of a bipolar transistor without the J-FET. This results in a considerable increase in the collector-emitter breakdown voltage up to 30 V or more being possible without having to except limitations with regard to dielectric strength and on resistivity
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