Method of fabricating layered structure
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United States of America Patent
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Nov 1, 2022
Grant Date -
Jan 28, 2021
app pub date -
Sep 28, 2020
filing date -
Jun 28, 2019
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Abstract
A method of fabricating layered structure is disclosed. A basal layer is formed. A laminate is formed on the basal layer, and the laminate includes a device layer, a sacrificial layer and a protection layer stacked in sequence. The device layer, the sacrificial layer and the protection layer are etched to obtain a patterned laminate. A first dielectric layer covering a lateral surface of the patterned laminate is formed. Part of the first dielectric layer and part of the protection layer are removed by polishing. The protection layer of the patterned laminate is etched to expose the sacrificial layer. A through hole in the first dielectric layer is formed to expose the basal layer. The sacrificial layer of the patterned laminate is etched to form an opening in the first dielectric layer, and the opening exposes a top surface of the device layer.
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Patent Owner(s)
- JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Hsu, Yen Yu | Zhubei, TW | 3 | 2 |
Lam, Chung Hon | Zhubei, TW | 115 | 3674 |
Lo, Kuo-Feng | Zhubei, TW | 10 | 26 |
Zhuang, Hao Ren | Zhubei, TW | 2 | 0 |
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