Light detecting element and method of manufacturing same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11264420
APP PUB NO 20210183917A1
SERIAL NO

16463760

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Abstract

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The present technology relates to a light detecting element and a method of manufacturing the same that make it possible to reduce pixel size. The light detecting element includes a plurality of pixels arranged in the form of a matrix. Each of the pixels includes a first semiconductor layer of a first conductivity type formed in an outer peripheral portion in the vicinity of a pixel boundary, and a second semiconductor layer of a second conductivity type opposite from the first conductivity type formed on the inside of the first semiconductor layer as viewed in plan. A high field region formed by the first semiconductor layer and the second semiconductor layer when a reverse bias voltage is applied is configured to be formed in a depth direction of a substrate. The present technology is, for example, applicable to a photon counter or the like.

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Patent Owner(s)

Patent OwnerAddress
SONY SEMICONDUCTOR SOLUTIONS CORPORATION4-14-1 ASAHI-CHO ATSUGI-SHI KANAGAWA 243-0014

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Otake, Yusuke Kanagawa, JP 79 317
Wakano, Toshifumi Kanagawa, JP 116 806

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