Solid-state imaging device with multiple impurity regions and method for manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 20, 2004
Grant Date -
May 8, 2003
app pub date -
Aug 21, 2002
filing date -
Aug 22, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The solid-state imaging device according to one embodiment of the present invention includes a semiconductor substrate, a plurality of photoelectric conversion regions arrayed in the vertical direction and the horizontal direction on the surface of the substrate, and an electric charge transfer region disposed between the photoelectric conversion regions adjacent in the horizontal direction of the substrate. The substrate comprises a n-type semiconductor substrate, a first p-type impurity region formed on the n-type semiconductor substrate, a semiconductor regions formed on the first p-type impurity region, and a second p-type impurity region disposed below the electric charge transfer region. The photoelectric conversion region and the electric charge transfer region are n-type impurity regions formed on the surface portion of the semiconductor region. A third p-type impurity region is formed in at least one region selected from the group consisting of a region located between the photoelectric conversion regions adjacent in the vertical direction and a region located below the second p-type impurity region between the photoelectric conversion regions adjacent in the horizontal direction in the semiconductor region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully