Dielectric treatment in integrated circuit interconnects
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United States of America Patent
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Nov 12, 2002
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N/A
app pub date -
Jan 11, 2001
filing date -
Jan 11, 2001
priority date (Note) -
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Abstract
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer has an opening formed therein and a surface region of nitrogen. A barrier layer lines the channel opening and reacts with the nitrogen to form an improved metal nitride surfaced barrier layer. A conductor core fills the opening over the barrier layer.
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