Method for manufacturing semiconductor structure

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United States of America Patent

PATENT NO 11587824
APP PUB NO 20200303243A1
SERIAL NO

16893810

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Abstract

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A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Li-Hsin New Taipei, TW 27 31
Liu, Chia-Wei Hsinchu County, TW 93 267
Tsai, Yu-Hsiang Hsinchu, TW 42 271
Tseng, Chung-Chuan Hsinchu, TW 52 328

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