Through-silicon via formed with a post passivation interconnect structure
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United States of America Patent
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Apr 26, 2011
Grant Date -
Aug 26, 2010
app pub date -
Jan 8, 2010
filing date -
Feb 24, 2009
priority date (Note) -
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Abstract
An integrated circuit structure includes a semiconductor substrate, a through-silicon via (TSV) extending into the semiconductor substrate, a pad formed over the semiconductor substrate and spaced apart from the TSV, and an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad. The interconnect structure includes an upper portion formed on the pad and a lower portion adjacent to the pad, and the upper portion extends to electrically connect the TSV.
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