Backside contact to a final substrate

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United States of America Patent

PATENT NO 10361123
APP PUB NO 20180068891A1
SERIAL NO

15799862

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Abstract

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A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. An electrically-conducting connection is formed in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gambino, Jeffrey P Portland, US 531 7362
Jaffe, Mark D Shelburne, US 146 2267
Shank, Steven M Jericho, US 219 846
Stamper, Anthony K Williston, US 613 6590

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