Contact structure with a lower interconnection having t-shaped portion in cross section and method for forming the same
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United States of America Patent
Stats
-
Nov 26, 2002
Grant Date -
Oct 24, 2002
app pub date -
Apr 12, 2001
filing date -
Jun 20, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A contact structure in a semiconductor device and a method of forming the same are provided. The contact structure includes a lower interconnection having a capacitor upper electrode of memory cells; an interlayer dielectric layer formed on the lower interconnection and having a contact hole that exposes a portion of the lower interconnection; and an upper interconnection formed on the interlayer dielectric layer and electrically connected to the lower interconnection through the contact hole. The lower portion of the lower interconnection has a larger width than the bottom of the contact hole and extends downward or below the bottom of the contact hole so that the lower interconnection has a T-shape in cross-section. With these structures, the lower interconnection can be prevented from being pierced when the contact holes are formed. Consequently, stable and uniform contact resistance can be obtained.
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