Manufacture of semiconductor device having insulation film of high dielectric constant
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United States of America Patent
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Aug 12, 2008
Grant Date -
Aug 4, 2005
app pub date -
Mar 25, 2005
filing date -
Mar 17, 2003
priority date (Note) -
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Abstract
A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf.sub.1-xAl.sub.xO:N film (0.1
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