Method of producing an etch pattern
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United States of America Patent
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Jul 16, 2002
Issued Date -
N/A
app pub date -
Aug 25, 2000
filing date -
Apr 18, 1997
priority date (Note) -
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status (Latency Note)
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Abstract
A masking and etching technique during the formation of a memory cell capacitor which utilizes an etching technique to utilize a maximum surface area over the memory cell and to form thin spacers to pattern separation walls between capacitors. This technique results in efficient space utilization which, in turn, results in an increase in the surface area of the capacitor for an increased memory cell capacitance.
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