Semiconductor memory with trench capacitor and method of fabricating the same
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United States of America Patent
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Aug 15, 2006
Grant Date -
Aug 25, 2005
app pub date -
Jan 21, 2005
filing date -
Jan 21, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor formed so as to the trench capacitor and having a gate electrode formed on the semiconductor substrate and a source/drain region formed in a surface of the semiconductor substrate, an impurity diffusion region formed in the semiconductor substrate so as to be electrically connected between the trench capacitor and the source/drain region, and a Ge inclusion region formed between the impurity diffusion region and the trench capacitor.
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