Nonvolatile charge trap memory device having <100> crystal plane channel orientation
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United States of America Patent
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Feb 1, 2011
Grant Date -
Nov 27, 2008
app pub date -
Sep 26, 2007
filing date -
May 25, 2007
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Abstract
A nonvolatile charge trap memory device and a method to form the same are described. The device includes a channel region having a channel length with <100> crystal plane orientation. The channel region is between a pair of source and drain regions and a gate stack is disposed above the channel region.
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