Writing circuit for a phase change memory
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United States of America Patent
Stats
-
Mar 2, 2010
Grant Date -
Dec 18, 2008
app pub date -
Nov 30, 2007
filing date -
Jun 13, 2007
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A writing circuit for a phase change memory is provided. The writing circuit comprises a driving current generating circuit, a first switch device, a first memory cell and a second switch device. The driving current generating circuit provides a writing current to the first memory cell. The first switch device is coupled to the driving current generating circuit. The first memory cell is coupled between the first switch device and the second switch device. The second switch device is coupled between the first memory cell and a ground, wherein when the driving current generating circuit outputs the writing current to the first memory cell, the second switch device is turned on after the first switch device has been turned on for a first predetermined time period.
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