Method for forming a trench MOSFET having self-aligned features
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United States of America Patent
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Mar 18, 2008
Issued Date -
N/A
app pub date -
Apr 20, 2005
filing date -
May 20, 2003
priority date (Note) -
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Abstract
A semiconductor device is formed as follows. A plurality of trenches is formed in a silicon layer. An insulating layer filling an upper portion of each trench is formed. Exposed silicon is removed from adjacent the trenches to expose an edge of the insulating layer in each trench, such that the exposed edge of the insulating layer in each trench defines a portion of each contact opening formed between every two adjacent trenches.
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