Programming pulse ramp control circuit

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United States of America Patent

PATENT NO 5687116
SERIAL NO

08727875

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Abstract

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A pulse ramp control circuit allows for the program voltage applied to the control gate of a memory cell to be ramped from a low voltage to a high voltage in a precise manner. The ramp rate of this program voltage is primarily determined by a single capacitor and the bias current provided thereto. By providing a ramped program voltage to the memory array during programming operations, present embodiments effectively cover the entire distribution of program voltage v. program current for the memory cells to be programmed, thereby minimizing over-program and under-program conditions without reducing program time.

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Patent Owner(s)

  • CHINGIS TECHNOLOGY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kowshik, Vikram San Jose, CA 26 824
Yu, Andy Teng-Feng Palo Alto, CA 10 344

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