Method of manufacturing memory device having word line with improved adhesion between work function member and conductive layer

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United States of America Patent

PATENT NO 11895820
APP PUB NO 20230232609A1
SERIAL NO

17578918

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Abstract

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The present application provides a method of manufacturing a memory device having a word line (WL) with improved adhesion between a work function member and a conductive layer. The method includes steps of providing a semiconductor substrate defined with an active area and including an isolation structure surrounding the active area; forming a recess extending into the semiconductor substrate and across the active area; forming a first insulating layer conformal to the recess; disposing a first conductive material conformal to the first insulating layer; forming a conductive member surrounded by the first conductive material; disposing a second conductive material over the conductive member and removing a portion of the first conductive material above the second conductive material to form a conductive layer enclosing the conductive member; and forming a second insulating layer over the conductive layer and conformal to the first insulating layer.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONHWA-YA TECHNOLOGY PARK 669 FUHSING 3 RD KUEISHAN TAOYUAN 333

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Wei-Tong New Taipei, TW 3 0
Hsu, Yueh New Taipei, TW 4 1

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