Flash memory having a high-permittivity tunnel dielectric
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United States of America Patent
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Jan 2, 2007
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app pub date -
Dec 18, 2003
filing date -
Dec 18, 2003
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Abstract
A high permittivity tunneling dielectric is used in a flash memory cell to provide greater tunneling current into the floating gate with smaller gate voltages. The flash memory cell has a substrate with source/drain regions. The high-k tunneling dielectric is formed above the substrate. The high-k tunneling dielectric can be deposited using evaporation techniques or atomic layer deposition techniques. The floating gate is formed on top of the high-k dielectric layer with an oxide gate insulator on top of that. A polysilicon control gate is formed on the top gate insulator.
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