Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices
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United States of America Patent
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Jul 10, 2007
Grant Date -
Jul 4, 2002
app pub date -
Nov 5, 2001
filing date -
Jan 4, 2001
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Expired
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Abstract
The invention encompasses a method of forming a silicon-doped aluminum oxide. Aluminum oxide and silicon monoxide are co-evaporated. Subsequently, at least some of the evaporated aluminum oxide and silicon monoxide is deposited on a substrate to form the silicon-doped aluminum oxide on the substrate. The invention also encompasses methods of forming transistors and flash memory devices.
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