Nonvolatile memory device and method of manufacturing thereof
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United States of America Patent
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Mar 18, 2014
Grant Date -
Apr 25, 2013
app pub date -
May 11, 2012
filing date -
Oct 19, 2011
priority date (Note) -
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Abstract
A nonvolatile memory device and a method of manufacturing thereof are provided. The method includes forming a floating gate on a substrate, forming a dielectric layer to conform to a shape of the floating gate, forming a conductive layer to form a control gate on the substrate, the control gate covering the floating gate and the dielectric layer, forming a photoresist pattern on one side of the conductive layer, forming the control gate in the form of a spacer to surround sides of the floating gate, the forming of the control gate including performing an etch-back on the conductive layer until a portion of the dielectric layer on the floating gate is exposed, and forming a poly pad, to which a plurality of contact plugs are connected, on one side of the control gate, the forming of the poly pad including removing the photoresist pattern.
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