Method for manufacturing SOI LOCOS MOSFET with metal oxide film or impurity-implanted field oxide
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United States of America Patent
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Dec 20, 2005
Grant Date -
Mar 24, 2005
app pub date -
Jan 28, 2004
filing date -
Sep 19, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This invention provides a semiconductor device with an element isolation implemented by a method of manufacturing a semiconductor device comprising the steps of: forming a pad oxide film 140 and a nitride film 150 sequentially on a silicon layer 130 in an element region S; forming a metal oxide film 180 for generating a fixed electric charge on the nitride film 150 and on the silicon layer 130 in an element isolation region A; forming a field oxide film 160 in the element isolation region A by implementing an oxidation treatment; and removing the metal oxide film 180 on the nitride film 150, the nitride film 150 and the pad oxide film 140. In the semiconductor device, the threshold voltage of a parasitic transistor is made high and prevented from turning on, and the influence of leak current is reduced and the hump characteristic of element is restrained.
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