Forming dual metal complementary metal oxide semiconductor integrated circuits
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United States of America Patent
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Mar 20, 2007
Grant Date -
Jul 20, 2006
app pub date -
Jan 18, 2005
filing date -
Jan 18, 2005
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Abstract
Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The trenches may be filled with metal by surface activating using a catalytic metal, followed by electroless deposition of a seed layer followed by superconformal filling bottom up.
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