Methods of forming transistors and CMOS semiconductor devices using an SMT technique
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United States of America Patent
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Jan 24, 2012
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Nov 12, 2010
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Sep 3, 2010
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Abstract
A method of forming a transistor induces stress in the channel region using a stress memorization technique (SMT). Impurities are implanted into a substrate adjacent a gate electrode structure to produce an amorphous region adjacent the channel region. The amorphous region is then recrystallized by forming a metal-oxide layer over the amorphous region, and then thermally treating the same. The crystallization creates compressive stress in the amorphous region. As a result, stress is induced in the channel region of the substrate located under the gate electrode structure.
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