Semiconductor device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10062695
APP PUB NO 20170162573A1
SERIAL NO

14961900

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Abstract

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A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a metal-oxide-semiconductor (MOS) transistor, and a dielectric layer. The MOS transistor includes a gate structure formed over the substrate. The dielectric layer is formed aside the gate structure, and the dielectric layer is doped with a strain modulator. An effective lattice constant of the dielectric layer modified by the doping with the strain modulator is different from an effective lattice constant of the dielectric layer prior to the doping.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuo, Kang-Min Hsinchu County, TW 57 156
Tsai, Shang-Chi New Taipei, TW 2 2

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