Selective electromigration improvement for high current C4s

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United States of America Patent

PATENT NO 8575007
APP PUB NO 20120248604A1
SERIAL NO

13073181

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Abstract

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The invention includes embodiments of a method for designing a flip chip and the resulting structure. The starting point is a flip chip with a semiconductor substrate, one or more wiring levels, and a plurality of I/O contact pads (last metal pads/bond pads) for receiving and sending electrical current. There is also a plurality of C4 bumps for connecting the I/O contact pads to another substrate. Then it is determined which of the C4s of the plurality of C4 bumps have a level of susceptibility to electromigration damage that meets or exceeds a threshold level of susceptibility, and in response, plating a conductive structure with a high electrical current carrying capacity (such as a copper pillar, copper pedestal, or partial copper pedestal) onto the corresponding I/O contact pads and adding a solder ball to a top portion of the conductive structure. The resulting structure is a flip chip wherein only a select few C4 bumps use enhanced C4s (such as copper pedestals) reducing the chance of defects.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Daubenspeck, Timothy Harrison Colchester, US 37 610
Gambino, Jeffrey P Westford, US 531 7337
Muzzy, Christopher David Burlington, US 24 293
Sauter, Wolfgang Hinesburg, US 189 1603
Wassick, Thomas Anthony LaGrangeville, US 14 153

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