Vertically base-connected bipolar transistor

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United States of America Patent

PATENT NO 9553177
APP PUB NO 20150287815A1
SERIAL NO

14742979

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Abstract

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Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the present disclosure are formed with a CMOS fabrication technique that decreases the transistor size while maintaining the high performance characteristics of a bipolar transistor.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Kie Y Chappaqua, US 652 41490
El-Kareh, Badih Cedar Park, US 56 896
Forbes, Leonard Corvallis, US 1219 61459

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