Semiconductor device provided with antenna ratio countermeasure circuit
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United States of America Patent
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Sep 15, 2009
Grant Date -
Jun 8, 2006
app pub date -
Dec 1, 2005
filing date -
Dec 3, 2004
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Abstract
A CMOS LSI includes an inverter including first and second MOS transistors, a relatively long metal interconnection connected to an input node of the inverter, first and second diodes releasing charges born by the metal interconnection during a plasma process to first and second wells, and first and second MOS transistors maintaining a voltage between the first and second wells at a level not higher than a prescribed voltage. Therefore, even when an antenna ratio is high, a gate oxide film in the first and second MOS transistors is not damaged during the plasma process.
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