Semiconductor device
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United States of America Patent
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-
Apr 14, 1981
Grant Date -
N/A
app pub date -
Jan 30, 1979
filing date -
Jan 30, 1978
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device for use as a surge arrester of NPN (or PNP) construction, in which two NPN (or PNP) elements having different avalanche breakdown voltages are so formed that at least the intermediate layers among three layers constituting such sections are continuously connected within the same semiconductive substrate. Carriers generated in the NPN (or PNP) element, which triggers avalanche at a low voltage, cause the NPN (or PNP) element having a higher avalanche breakdown voltage to be switched to a highly conductive state. The semiconductor device of the invention provides great surge capacity, and can be used as a surge arrester of increased reliability.
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