Substrate structure and method of forming the same
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United States of America Patent
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Oct 22, 2013
Grant Date -
Oct 8, 2009
app pub date -
Aug 8, 2008
filing date -
Apr 3, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.
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