Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state imaging device

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United States of America Patent

PATENT NO 11245014
APP PUB NO 20210083058A1
SERIAL NO

16956232

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Abstract

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Provided is a method of producing an epitaxial silicon wafer having high gettering capability resulting in even more reduced white spot defects in a back-illuminated solid-state imaging device. The method includes: a first step of irradiating a surface of a silicon wafer with cluster ions of CnHm (n=1 or 2, m=1, 2, 3, 4, or 5) generated using a Bernas ion source or an IHC ion source, thereby forming, in the silicon wafer, a modifying layer containing, as a solid solution, carbon and hydrogen that are constituent elements of the cluster ions; and a subsequent second step of forming a silicon epitaxial layer on the surface. In the first step, peaks of concentration profiles of carbon and hydrogen in the depth direction of the modifying layer are made to lie in a range of more than 150 nm and 2000 nm or less from the surface.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1058634 ?1058634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kadono, Takeshi Tokyo, JP 26 65
Kurita, Kazunari Tokyo, JP 49 266

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