Semiconductor device including a channel stop structure and method of manufacturing the same
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United States of America Patent
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Mar 13, 2007
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N/A
app pub date -
May 6, 2005
filing date -
Oct 30, 2001
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Abstract
It is an object to obtain a semiconductor device comprising a channel stop structure which is excellent in an effect of stabilizing a breakdown voltage and a method of manufacturing the semiconductor device. A silicon oxide film (2) is formed on an upper surface of an N.sup.--type silicon substrate (1). An N.sup.+-type impurity implantation region (4) is formed in an upper surface (3) of the N.sup.--type silicon substrate (1) in a portion exposed from the silicon oxide film (2). A deeper trench (5) than the N.sup.+-type impurity implantation region (4) is formed in the upper surface (3) of the N.sup.--type silicon substrate (1). A silicon oxide film (6) is formed on an inner wall of the trench (5). A polysilicon film (7) is formed to fill in the trench (5). An aluminum electrode (8) is formed on the upper surface (3) of the N.sup.--type silicon substrate (1). The aluminum electrode (8) is provided in contact with an upper surface of the polysilicon film (7) and the upper surface (3) of the N.sup.--type silicon substrate (1). The aluminum electrode (8) is extended over the silicon oxide film (2) to constitute a field plate.
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