Complementary metal-oxide semiconductor compatible patterning of superconducting nanowire single-photon detectors
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United States of America
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Mar 8, 2022
Grant Date -
Sep 24, 2020
app pub date -
Apr 14, 2020
filing date -
Apr 14, 2020
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Abstract
A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.
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