One-transistor random access memory technology compatible with metal gate process
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United States of America Patent
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Sep 18, 2007
Grant Date -
Jan 26, 2006
app pub date -
Jul 22, 2004
filing date -
Jul 22, 2004
priority date (Note) -
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Abstract
One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.
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