Magnetic memory

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United States of America Patent

PATENT NO 8238144
APP PUB NO 20100226167A1
SERIAL NO

12716723

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Abstract

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A spin-transfer magnetic memory includes a magnetoresistive element having a pinned layer, a free layer and a tunnel insulating layer provided between the pinned layer and the free layer, a bit line connected to one terminal of the magnetoresistive element, a select transistor having a current path whose one terminal is connected to the other terminal of the magnetoresistive element, a source line connected to the other terminal of the current path of the select transistor, and a pulse generation circuit passing a microwave pulse current through the magnetoresistive element, and assisting a magnetization switching of the free layer in a write operation.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kajiyama, Takeshi Yokohama, JP 80 1660

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