Dielectric structure and method of formation
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United States of America Patent
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Mar 2, 2004
Issued Date -
N/A
app pub date -
Aug 12, 2002
filing date -
Dec 10, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming a dielectric structure. A first layer is formed, wherein the first layer includes a first fully cured photoimageable dielectric (PID) material. A sticker lays is nonadhesively formed on the first layer, wherein the sticker layer includes a partially cured PID material. A second layer is nonadhesively formed on the sticker layer, wherein the second layer includes a second fully cured PID material, wherein the sticker layer is nonadhesively sandwiched between the first layer and the second layer such that the sticker layer is in non-adhesive contact with the first layer and in non-adhesive contact with the second layer, and wherein the sticker layer is capable of remaining in non-adhesive contact with the first layer and the second layer until the sticker layer is subsequently subjected to additional curing.
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