Method for manufacturing a grid

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United States of America Patent

PATENT NO 11876116
APP PUB NO 20220254887A1
SERIAL NO

17660888

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Abstract

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A grid is manufactured with a combination of ion implant and epitaxy growth. The grid structure is made in a SiC semiconductor material with the steps of a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer (n1), b) by epitaxial growth adding at least one doped semiconductor SiC material to form separated second regions (p2) on the first layer (n1), if necessary with aid of removing parts of the added semiconductor material to form separated second regions (p2) on the first layer (n1), and c) by ion implantation at least once at a stage selected from the group consisting of directly after step a), and directly after step b); implanting ions in the first layer (n1) to form first regions (p1). It is possible to manufacture a grid with rounded corners as well as an upper part with a high doping level. It is possible to manufacture a component with efficient voltage blocking, high current conduction, low total resistance, high surge current capability, and fast switching.

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Patent Owner(s)

  • II-VI DELAWARE, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Elahipanah, Hossein Sollentuna, SE 16 8
Reshanov, Sergey Upplands-Väsby, SE 16 11
Schoner, Adolf Hässelby, SE 13 105
Thierry-Jebali, Nicolas Stockholm, SE 14 8

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