Semiconductor integrated circuit device and method of manufacturing the same
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United States of America Patent
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Dec 9, 2003
Grant Date -
Jul 24, 2003
app pub date -
Feb 5, 2003
filing date -
Sep 13, 1999
priority date (Note) -
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Abstract
A capacitive element C.sub.1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C.sub.1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power supply voltage.
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