Radio frequency integrated circuit having relatively small circuit area and method of fabricating the same

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United States of America Patent

PATENT NO 11257845
APP PUB NO 20210375946A1
SERIAL NO

16940093

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Abstract

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A radio frequency integrated circuit includes a silicon CMOS substrate with at least one CMOS device buried therein, and at least one thin film transistor formed on the silicon CMOS substrate and functioning as a radio frequency device. The thin film transistor includes a T-shaped gate electrode. A method for the fabricating a radio frequency integrated circuit is also disclosed.

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Patent Owner(s)

  • NATIONAL CHIAO TUNG UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Yu-An Hsinchu, TW 16 26
Lin, Horng-Chih Hsinchu, TW 21 381

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