Semiconductor IC-embedded substrate having heat dissipation structure and its manufacturing method
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United States of America Patent
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Jun 20, 2023
Grant Date -
Jun 18, 2020
app pub date -
Dec 11, 2019
filing date -
Dec 13, 2018
priority date (Note) -
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status (Latency Note)
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Abstract
Disclosed herein is a semiconductor IC-embedded substrate that includes insulating layers, conductor layers, and a semiconductor IC embedded in the insulating layers. The insulating layers includes first and second insulating layers. The conductor layers includes a first conductor layer having a first wiring pattern and a second conductor layer having a second wiring pattern. The semiconductor IC includes a rewiring pattern connected in common to power supply pads. The rewiring pattern is connected to the first wiring pattern via a first opening of the first insulating layer. The first wiring pattern is connected to the second wiring pattern via second openings of the second insulating layer. The first opening is greater in area than each of the second openings.
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