Semiconductor memory device with word lines adjacent and non-intersecting with capacitor grooves
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United States of America Patent
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-
Oct 2, 1990
Issued Date -
N/A
app pub date -
Feb 22, 1989
filing date -
Dec 25, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A grooved separating region 112 having information electric charge storing capacitances C.sub.P formed on side surfaces thereof is formed to extend the region between the adjacent word line 107 in parallel with the word line 107. As a result, the grooved separating region 112 does not contact the channel region 111 of the gate transistors and does not intersect the word line 107.
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