Heterojunction oxide non-volatile memory device

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United States of America Patent

PATENT NO 8378345
APP PUB NO 20120205611A1
SERIAL NO

13456378

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Abstract

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A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer.

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Patent Owner(s)

  • 4D-S PTY LTD.;4DS PTY, LTD

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Dongmin Perth, AU 58 612

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